醫學研究

Stent-assisted embolization of ruptured distal intracranial aneurysms using a low profile stent system

Wong GKC, Yu SCH, Chan DYC, Poon WS.  Cerebrovascular Diseases. 2014; 38(suppl 1): 44. doi: 10.1159/000367674.

Abstract (PI-02)

Introduction: Traditional stent-assisted embolization of intracranial aneurysms required delivery catheters typically larger than the coiling and balloon catheters, which are also more difficult to access distal circulation.

Objective: We assessed the application of a low profile stent system for stent-assisted embolization of ruptured distal intracranial aneurysms.

Methods: We retrospectively reviewed and identified these patients over from September to December 2013 from our hospital records.

Results: Five patients underwent stent-assisted embolization of ruptured distal intracranial aneurysms using a low profile stent system (LVISTM Jr. Device, Microvention). The aneurysm

locations were anterior cerebral artery (2), middle cerebral artery (2), and posterior cerebral artery (1). All aneurysms were completely occluded at the time of treatment and last radiological follow up. One patient developed intracerebral hemorrhage at a vascular territory different from the offending vessel. All patients achieved favorable neurological outcome at last follow-up (mRS 0-2).

Conclusion: A low profile stent system provided a safe and feasible way for stent-assisted embolization of ruptured distal intracranial aneurysms.

Citation:

Wong GKC, Yu SCH, Chan DYC, Poon WS.  Stent-assisted embolization of ruptured distal intracranial aneurysms using a low profile stent system. Cerebrovascular Diseases. 2014; 38(suppl 1): 44. doi: 10.1159/000367674.

https://doi.org/10.1159/000367674